![]() ![]() Uniform light emission from electrically driven plasmonic grating using multilayer tunneling barriers University of Twente, Netherland endfootnotesizeĮlectroluminescence explored internal behavior of carriers in InGaAsP single-junction solar cell Le M P 2003 Silicon Light Emitting Devices for Integrated Application Ph. ![]() ![]() Sansen W M C 2006 Analog Design Essentials (Nertherlands: Springer) p9 Sez S M and Ng K K 2007 Physics of Semiconductor Devices (New Jersey: A John Willey & Sons, Inc.) p134Ĭhang S T, Chen K F, Shie C R, Liu C W, Chen M J and Lin C F 2002 Solid State Electronics 46 1113 Sez S M and Ng K K 2007 Physics of Semiconductor Devices (New Jersey: A John Willey & Sons, Inc.) p235 Lee M H, Chen K F, Lai C C, Liu C W, Pai W W, Chen M J and Lin C F 2002 Jpn. Lin C F, Liu C W, Chen M J, Lee M H and Lin I C 2000 J. Green M A, Zhao J, Wang A, Reece P J and Gal M 2001 Nature 412 805 Ng W L, Lourenco M A, Gwilliam R M, Ledain S, Shao G and Homewood K P 2001 Nature 410 192 102 369Įl Ghazi H, Jorio A and Zorkani I 2008 Optics Communications 281 3320 46 1022Ĭhynoweth A G and McKay K G 1956 Phys. 40 577Īkil N, Kerns S E, Kerns D V, Hoffmann A and Charles J P 1999 IEEE Trans. Lacaita A, Zappa F, Bigliardi S and Manfredi M 1993 IEEE Trans. Gautam D K, Khokle W S and Garg K B 1988 Solid-State Electron 31 1119įigielski T and Torum A 1962 International Conference on Physics of Semiconductors Exeter UK, July 16-20 1962 p863 Lee H C and Liu C K 2005 Solid-State Electronics 49 1172ĭu Plessis M, Aharoni H and Snyman L W 2002 IEEE Journal of Selected Topics In Quantum Electronics 8 1412 17 2041Īaroni H and du Plessis M 2004 IEEE Journal of Quantum Electronics 40 557 Snyman L W, Aharoni H and du Plessis M 2005 IEEE Phot. Snyman L W, Aharoni H, du Plessis M and Gouws R B J 1998 Opt. Xu J, Ma T f, Li W, Chen K J, Li Z F and Lu W 2000 Chin. Presting H, Kibbel H, Jaros M, Turton R M, Menczigar U, Abstreiter G and Grimmeiss H G 1992 7 1127 Lu Z H, Lockwood D J and Baribeau J M 1995 Nature 378 258Ĭastagna M E, Coffa S, Monaco M, Caristia L, Messina A, Mangano R and Bongiorno C 2003 Physica E 16 547 B 20 018503Ĭullis A G, Canham L T and Calcott P D J 1997 J. Wang Wei(王伟), Huang Bei-Ju(黄北举), Dong Zan(董赞), and Chen Hong-Da(陈弘达) Multifunctional silicon-based light emitting device in standard complementary metal–oxide–semiconductor technology 2011 Chin. Keywords: optoelectronic integrated circuit complementary metal–oxide–semiconductor technology silicon-based light emitting device electroluminescenceįund: Project supported by the National Natural Science Foundation of China (Grant Nos. The mechanisms behind these different emissions are explored. Optoelectronic characteristics of the device working in different modes are measured and compared. Furthermore, when the gate oxide is broken down, NIR light is emitted from the polysilicon/oxide/silicon structure. An apparent modulation effect on the light intensity from the polysilicon gate is observed in the forward injection mode. This device is capable of versatile working modes: it can emit visible to near infra-red (NIR) light (the spectrum ranges from 500 nm to 1000 nm) in reverse bias avalanche breakdown mode with working voltage between 8.35 V–12 V and emit NIR light (the spectrum ranges from 900 nm to 1300 nm) in the forward injection mode with working voltage below 2 V. Abstract A three-terminal silicon-based light emitting device is proposed and fabricated in standard 0.35 μm complementary metal–oxide–semiconductor technology. ![]()
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